Dispositif semi-conducteur ayant une jonction abrupte et procédé pour sa fabrication utilisant l'épitaxie

Halbleiterbauelement mit einem abrupten Übergang und Verfahren zu seiner Herstellung mittels Epitaxie

Semiconductor device having an abrupt junction and method of manufacturing same using epitaxy


A semiconductor device of a multilayer structure com. prising semiconductor materials of different properties manufactured by using at least a step of epitaxially forming a semi- conductor material layer on a substrate and a passivation film layer thereover, a step of introducing impurities into specific portions of the epitaxially formed semiconductor material layer and a step of removing the passivation film layer formed directly above the epitaxially formed semiconductor material layer within an epitaxy device and then applying epitaxial growing. Impurities introduced additionally to specific portions of the layer inside are eliminated substantially abruptly at the boundary in adjacent with the layer above the region introduced with impurities and the properties of semiconductors vary substantially abruptly at the boundary between the layer. introduced with the Impurities and the layer thereabove. The material for the passivation film layer for use with the manufacturing step comprises a passivation film material that can be epitaxially formed and easily removed at a temperature and in a atmosphere under which the epitaxially formed layer below the passivation film are not decomposed or evaporized, particularly, passivation film material composed of a multilayer structure formed by epitaxially forming, on the above-mentioned passivation film material, that can be selectively removed easily out of as epitaxy device.




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Patent Citations (6)

    Publication numberPublication dateAssigneeTitle
    DE-2805008-A1August 09, 1979Siemens AgHochfrequenztransistor
    EP-0166498-A1January 02, 1986Kabushiki Kaisha ToshibaDouble heterostructure light-emitting semiconductor device
    GB-1304246-AJanuary 24, 1973
    JP-S59125680-AJuly 20, 1984Nec CorpSemiconductor light emitting element
    US-4115150-ASeptember 19, 1978Northern Telecom LimitedMethod of producing optoelectronic devices with control of light propagation
    US-4380774-AApril 19, 1983The United States Of America As Represented By The Secretary Of The NavyHigh-performance bipolar microwave transistor

NO-Patent Citations (1)

    PATENT ABSTRACTS OF JAPAN, vol. 8, no. 250 (E-279)[1687], 16th November 1984; & JP - A - 59 125 680 (NIPPON DENKI) 20-07-1984

Cited By (4)

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    EP-0762489-A2March 12, 1997Daimler-Benz AktiengesellschaftProcédé de fabrication pour un transistor bipolaire à hétérojonction
    EP-0762489-A3November 12, 1997Daimler-Benz AktiengesellschaftProcédé de fabrication pour un transistor bipolaire à hétérojonction
    EP-0762489-B1June 27, 2001DaimlerChrysler AGMethod for fabricating a heterojunction bipolar transistor
    FR-2706080-A1December 09, 1994Thomson CsfHeterojunction bipolar transistor with buried sub-collector/collector